The H-enhanced recrystallization during thermal annealing in N+-implanted GaAs was studied by combinatorial implantation process. Raman spectroscopy was used to study the crystallization properties of a set of hydrogenated cells on the N+-implanted GaAs wafer. A whole competitive process between H+ implantation-induced damage and recovery in the re-growth process of amorphous GaAs was observed within the proton dose region of 1.6 x 1015 to 1.1 x 1017/cm2. In H+ dose region of 2.1 x 1016 to 5.4 x 1016/cm2, H-enhanced recovery of crystal dominates the re-growth process. The crystal quality was better than that of non-hydrogenated cell of N+-implanted GaAs in the H+ dose range from 4.7 x 1016 to 8.1 x 1016/cm2. It was suggested that the vacancy supersaturation produced during H irradiation was dominantly responsible for the enhancement of thermal re-growth in the N+-implanted GaAs. Both the crystallization and amorphization process were clearly observed in different proton implantation dose regions.

Hydrogen-Enhanced Recrystallization in N+-Implanted GaAs. J.Wang, Z.Li, W.Xu, X.Guo, W.Cai, Q.Wang, X.Chen, W.Lu: Applied Physics A, 2004, 79[7], 1809-11