High-electric-field I–V characteristics and low-frequency oscillations were measured in a low-dislocation-density semi-insulating GaAs. At the electrodes where several dislocations exist, the sub-linear I–V behavior was weaker and more scattered, and the onset voltage of low-frequency oscillations was lower and its waveform was more complicated than those at the electrodes where no dislocations exist. The high-electric-field properties were explained by electrical inhomogeneities induced by the dislocations.

High Electric-Field Current–Voltage Characteristics and Low-Frequency Oscillations in a Low Dislocation-Density Semi-Insulating GaAs. M.Kiyama, M.Tatsumi, M.Yamada: Journal of Applied Physics, 2005, 97[11], 116103 (3pp)