The use of nano-indentation as a dislocation patterning technique for self-assembled nanostructures was investigated. In this context, a study was made of the behavior of GaAs under ultra-low load indentation conditions. It was shown that periodic dislocation arrays were formed and could be well controlled by nano-indentation. Transmission electron microscopy revealed that the crystal deformed solely by dislocation activity; with no evidence of stacking faults, twinning, fracture or phase transformation. The resulting strain field was highly localized, indicating that ultra-low load nano-indentation could provide an excellent means to mechanically bias nanostructure nucleation and patterning during subsequent crystal growth.

Nanoscale Dislocation Patterning by Ultra-Low Load Indentation. C.R.Taylor, E.A.Stach, G.Salamo, A.P.Malshe: Applied Physics Letters, 2005, 87[7], 073108 (3pp)