The interaction of S with dislocations in GaAs was studied by Raman, cathodoluminescence, and transmission electron microscopy. The carrier concentration increased at dislocations in a region extending up to 10µm. At the same time, the dislocations were decorated with As precipitates. The findings could be explained by a diffusion-drift-aggregation model describing the various processes of point defects at dislocations.

Diffusion Drift Aggregation Model of the Interaction of Point Defects and Dislocations in Semiconductors. H.S.Leipner, H.Lei: Physica Status Solidi C, 2005, 2[6], 1859-63