It was noted that the core of non-screw dislocations in compound semiconductors of AB type consisted of either all-A atoms or all-B atoms. These dislocations, known as α and β dislocations, had very different properties including different mobilities; with the difference increasing with decreasing temperature. The differing core nature of α and β dislocations affected the mechanical properties of compound semiconductors, including their plastic and fracture behavior. An investigation was made here of the mechanical properties of 2 compound semiconductors. The measurements included the brittle-to-ductile transition temperature, determined by 4-point bend tests, as well as the indentation plasticity and fracture. The results of subsequent transmission electron microscopic investigation of the configuration and core nature of dislocations in GaAs was also reported. The observed asymmetries in the plastic and fracture behavior of the 2 crystals were interpreted in terms of the different core nature of dislocations.

The Effect of Dislocation Core Structure on the Plastic and Fracture Behavior of GaAs and InP. P.Pirouz, S.Wang, B.Bayu-Aji, M.Zhang, J.L.Démenet: Physica Status Solidi C, 2005, 2[6], 1973-86