{111} GaAs and InSb thin foils were deformed by a Vickers indenter at between room temperature and 370C. Interferometry was used to observe the indented and opposite faces of thin foils and to analyze the plastic flow throughout the samples. Attention was paid to the polarity (A or B) of the specimens, as GaAs as well as InSb were known to show large difference between α and β dislocation mobilities. A model considering the influence of polarity was proposed to describe the material flow throughout thin samples and analyze differences observed between both semiconductors.Indentation Deformation of Thin {111} GaAs and InSb Foils - Influence of Polarity. G.Patriarche, L.Largeau, J.P.Riviere, E.Le Bourhis: Philosophical Magazine Letters, 2005, 85[1], 1-12