Data were presented on the mechanical stress σ developing in the diffusion zone of single crystals at different dislocation densities and relationships between the concentrations of As and Ga vacancies. The results were analyzed in terms of impurity diffusion through Ga, As and interstitial sites. The influence of the defect system on σ was shown to depend on the mechanism of impurity diffusion. A correction coefficient which eliminates the discrepancy between experimental stress data and theoretical predictions was determined for different diffusion mechanisms.

Influence of Structural Defects on the Mechanical Stress in the Impurity Diffusion Zone of GaAs Single Crystals. M.B.Litvinova, A.D.Shtanko: Inorganic Materials, 2005, 41[8], 789-92