Co-implantation of N and In into GaAs and rapid thermal annealing was carried out to create N-In complexes. The NAs-InGa nearest-neighbor pair was identified by Fourier transform infra-red absorption spectroscopy, using the frequency shift of the NAs local vibrational mode caused by the incorporation of In. The experimentally observed line shape of the absorption band was reproduced by a valence-force model, taking into account 2 different bond-stretching force constants for the N-Ga and N-In bond. Results on epitaxially grown GaInAsN layers, before and after annealing, were analyzed.

Local Mode Frequencies of the NAs-InGa Nearest-Neighbor Pair in (Ga,In)(As,N) Alloys. H.C.Alt, Y.V.Gomeniuk: Physical Review B, 2004, 70[16], 161314 (4pp)