In LEC-grown GaAs:S, two vibrational absorption lines were measured at 2382.2 and 2392.8/cm (T = 7K) and assigned to 11B-H and 10B-H stretching modes. Uniaxial stress experiments revealed that the symmetry of the responsible complex was Cs. Bond strength considerations suggested that this complex was a SAs-BGa pair passivated by H bonded to B. The constituents of this S-B-H complex were located within a {110} plane.

Evidence of a Sulfur-Boron-Hydrogen Complex in GaAs Grown by the Liquid Encapsulation Czochralski Technique. W.Ulrici, B.Clerjaud: Physical Review B, 2004, 70[20], 205214 (5pp)