Beam-induced lateral epitaxy, an epitaxial lateral growth method that does not require oxide masks, was done on prefabricated truncated ridges on a (¯1¯1¯1)B GaAs substrate. It was found that (¯1¯1¯1)B facets formed on the top surface of the beam-induced lateral epitaxial layer and that the top layer was flatter than that grown on GaAs(001). Beam-induced lateral epitaxial growth on an off-axis (¯1¯1¯1)B substrate showed that the top surface became flatter with an increase of the off-axis angle. The flatness of the top surface also increased by increasing the growth temperature. These results indicated that the flatness of the top layer depends on the growth mode during beam-induced lateral epitaxy and that the suppression of 2-dimensional nucleation of rotation twin embryo was important to fabricate a flat top layer using the beam-induced lateral epitaxy method. Under the optimum growth conditions, a flat surface of the beam-induced lateral epitaxial layer on the GaAs(¯1¯1¯1)B surface could be made.

Defect Formation Mechanism in Beam-Induced Lateral Epitaxy on (111)B GaAs Substrate. K.Saitoh, T.Suzuki, T.Maruyama, S.Naritsuka: Journal of Crystal Growth, 2005, 277[1-4], 51-6