A study was made of the lateral orderings of III–V nanostructures resulting from a GaAs/InAs/InGaAs/GaAs sequence, grown onto GaAs by metalorganic vapor phase epitaxy at 2 different temperatures. For both samples, the ordering was induced by the stress field of a periodic dislocation network shallowly buried and parallel to the surface. This dislocation network was a grain boundary that forms, between a thin GaAs layer (on which growth was performed) and a GaAs substrate joined together by wafer bonding, in order to accommodate a tilt and a twist between these 2 crystals; both these misorientations were imposed in a controlled manner. This grain boundary was composed of a 1-dimensional network of mixed dislocations and of a 1-dimensional network of screw dislocations. For both samples, the nanostructures observed by transmission electron microscopy and atomic force microscopy were ordered by the underlying dislocation network observed by transmission electron microscopy since they had the same dimensions and orientations as the cells of the dislocation network.

Long-Range Ordering of III–V Semiconductor Nanostructures by Shallowly Buried Dislocation Networks. J.Coelho, G.Patriarche, F.Glas, G.Saint-Girons, I.Sagnes: Journal of Physics - Condensed Matter, 2004, 16[45], 7941-6