Photoluminescence experimental data from interdiffused undoped single quantum wells of GaAsSb/GaAs and InGaAs/GaAs were analyzed using a genetic algorithm method. A direct determination of the interdiffusion parameters without the need for the Arrhenius plot was shown to be possible and successful. The interdiffusion parameters determined by using this algorithm and, as expected by the theoretical diffusion model, were shown to be comparable to but more accurate than those obtained by the least-squares analysis fit widely reported in the literature which used a general linear equation contrary to the theoretical predictions. This latter was shown to draw, in some cases, unreliable conclusions as to the intrinsic diffusivity.

Accurate and Direct Determination of Interdiffusion Parameters - a Genetic Algorithm Approach. O.M.Khreis, I.S.Al-Kofahi: Semiconductor Science and Technology, 2005, 20[3], 320-5