Multiple quantum well Si-doped low-temperature grown structures were studied by means of photoluminescence spectroscopy. The samples were grown at 320C, using various As pressures, and rapidly thermally annealed at 500 to 900C. As well as the band-edge photoluminescence feature which arose from band-band recombination, a defect-related photoluminescence feature was also observed in both the GaAs and GaAs/AlGaAs multiple quantum well structures. Deep-level transient spectroscopic measurements showed that As antisite-like defects existed in as-grown and 600C-annealed Si-doped low-temperature grown GaAs. A differing annealing temperature dependence of the band-edge photoluminescence feature in the 2 materials was observed. The defect-related photoluminescence feature was suggested to be related to a defect complex which consisted of Si and As atoms.

Photoluminescence Characterization of Si-Doped Low-Temperature Grown GaAs and GaAs/AlGaAs Multiple Quantum Wells M.H.Zhang, Y.F.Zhang, Q.Huang, C.L.Bao, J.M.Sun, J.M.Zhou: Journal of Crystal Growth, 2000, 209[1], 37-42