The defect structure of (Ga,Mn)As epilayers and its impact on ferromagnetic properties were briefly considered. Attention was paid to the magnetic domain walls in nanostructures fabricated from this material, whose controllable dynamics might be exploited in magneto-electronic devices. Original results were presented which revealed a negative contribution, of a domain wall to the epilayer resistivity, in the case of walls pinned at nano-constrictions.

New Challenge - Extended Defects in Ferromagnetic Semiconductors. T.Figielski, T.Wosinski, O.Pelya, J.Sadowski: Physica Status Solidi C, 2005, 2[6], 1929-32