Deep level transient spectroscopy and transmission electron microscopy were used to study europium implanted gallium nitride layers. The implantation was realized at room temperature in the random and channeled geometries. From deep level transient spectroscopy, intrinsic defects with associated levels located in the band-gap (below the conduction band) were determined. A new electron trap named Eu2 was also pointed out. Its associated level was located at about Ec-0.36eV and the defect was probably related to the Eu rare-earth ion. Transmission electron microscopic investigations showed a difference in structure caused by changing the geometry of implantation. The random implanted sample contained numerous planar defects.

Deep Level Transient Spectroscopy and TEM Analysis of Defects in Eu-Implanted GaN. A.Colder, T.Wojtowicz, P.Marie, P.Ruterana, V.Matias, M.Mamor, A.Vantomme, S.Eimer, L.Méchin: Physica Status Solidi C, 2005, 2[7], 2450-3