By using a variety of optical characterization techniques, including cathodoluminescence, temperature-dependent continuous wave- and time-resolved photoluminescence, and photoluminescence excitation spectroscopy, high optical quality of the GaN0.018P0.982 epilayers lattice matched to Si substrates was demonstrated and was shown to be comparable to that of state-of-the-art GaNP alloys grown onto GaP substrates. The growth of GaNP on Si was, however, found to facilitate the formation of several point defects, including complexes involving Ga interstitial atoms (Gai).Evaluation of Optical Quality and Defect Properties of GaNxP1–x Alloys Lattice Matched to Si. M.Izadifard, J.P.Bergman, I.Vorona, W.M.Chen, I.A.Buyanova, A.Utsumi, Y.Furukawa, S.Moon, A.Wakahara, H.Yonezu: Applied Physics Letters, 2004, 85[26], 6347-9