Optical properties of antiphase boundaries (APBs) in monolayer superlattices of GaP/InP were studied. Determining selectively the arrangements of In and Ga atoms around APBs by cross-sectional scanning tunneling microscopy, it was found that atomic layers of InP on (¯111) and (¯110), sandwiched between the domains of superlattices, were formed on APBs. Polarized cathodoluminescence spectroscopy in a transmission electron microscope suggested that the InP layers act as quantum wells oriented on a slant with respect to the substrate and they emit light linearly polarized parallel to the layers.

Polarized Light Emission from Antiphase Boundaries Acting as Slanting Quantum Wells in GaP/InP Short-Period Superlattices. Y.Ohno: Physical Review B, 2005, 72[12], 121307 (4pp)