It was noted that simulations and experiments had hinted that the solid temperature could affect the dynamics of defect formation when the energies of bombarding ions fell below about 100eV. The present work offered direct experimental confirmation of this phenomenon, via measurements of the energy thresholds for ion-enhanced surface diffusion of In on Ge, where transport rates depended upon surface defect formation. Such temperature-dependent energy thresholds were expected to offer a new means for modulating sputtering and defect formation in various ion processing applications.

Temperature-Dependent Energy Thresholds for Ion-Stimulated Defect Formation in Solids. Z.Wang, E.G.Seebauer: Physical Review Letters, 2005, 95[1], 015501 (3pp)