Extended defects formed after H implantation into Si and Ge (100) substrates and subsequent thermal annealing were investigated by transmission electron microscopy. The majority of the extended defects formed in both materials were platelet-like structures lying on {100} and {111} planes. The {100} platelets were found not only parallel, but also perpendicular, to the surface. In Ge wafers, a high density of {311} defects and nano-bubbles with an average size of 2nm were observed. The difference between two materials could be attributed to the weaker strength of the Ge–H bond.

Study of Extended-Defect Formation in Ge and Si after H Ion Implantation. T.Akatsu, K.K.Bourdelle, C.Richtarch, B.Faure, F.Letertre: Applied Physics Letters, 2005, 86[18], 181910 (3pp)