A set of constitutive equations describing the plasticity of semiconductors was compared with the results of mechanical tests. Constant strain-rate compression tests were interrupted before the peak of the initial multiplication yield point, i.e. at the moment of intense dislocation multiplication, by transient tests (stress-relaxations and creep tests). Various laws for dislocation multiplication were used in constitutive modelling and their predictions were compared with experimental transient curves. A generalized law was proposed, which perfectly fits all the transient tests data, provided each sample was considered separately. It seems necessary to account for the properties of dislocation sources in the multiplication law, at least at the early stages of plasticity. Dislocation Multiplication Rate in the Early Stage of Germanium Plasticity. J.Fikar, C.Dupas, T.Kruml, A.Jacques, J.L.Martin: Materials Science and Engineering A, 2005, 400-401, 431-4