A model relating the pronounced effect of impurities on the processes of plastic deformation of semiconductor crystals to the dynamic aging of dislocations was proposed. The impurity contribution to the macroscopic flow stress that was established beyond the yield point was calculated by averaging over the ensemble of dislocations of different age. The concentration dependence of the impurity contribution to the hardening of semiconductors was predicted. The theory was illustrated by experimental data for a GeSi solid solution.

Hardening of Semiconductor Crystals Caused by the Dynamic Aging of Dislocations. B.V.Petukhov: Physica Status Solidi C, 2005, 2[6], 1864-8