In previous publications, the glide velocity of dislocations was analyzed and estimated in GeSi/Si (001) heterostructures grown at 550C. The method of growing GeSi films with the use of a low-temperature Si buffer was developed recently and was not involved in these studies. The present work deals with a more detailed analysis of dislocation propagation velocities in GeSi films grown with the use of the low-temperature Si buffer and those grown at low-temperatures. The dislocation velocity was estimated by the measuring of the length of misfit dislocations observed in annealed films. Additionally a method for estimating the mean threading dislocation glide velocity was used, which involved the measured threading dislocation density in a particular film and degree of its plastic relaxation directly related to the number of threading dislocations and their glide velocity. It was shown that dislocation glide velocities in heterostructures grown with the use of the low-temperature Si buffer and at low-temperatures were higher than the values predicted by the classical calculations by an order of magnitude.

Heterostructures GexSi1−x/Si(001) Grown by Low-Temperature (300–400C) Molecular Beam Epitaxy - Misfit Dislocation Propagation. Y.B.Bolkhovityanov, A.S.Deryabin, A.K.Gutakovskii, M.A.Revenko, L.V.Sokolov: Journal of Crystal Growth, 2005, 280[1-2], 309-19