Metamorphic compositionally graded InxAl1–xAs layers grown on InP by molecular beam epitaxy with a final In mole fraction of x = 1.0 (6.05Å) were investigated. To examine the effects of relative growth temperature on strain relaxation and surface morphology at different stages of the buffer layer growth, a series of samples was produced with the In mole fraction graded from x = 0.52 to x = 0.64, 0.79 and 1.0 with a constant grading rate. The high misfit dislocation velocity in this system permitted the grading to be accomplished with a thin layer (~1µm), complete strain relaxation and low threading dislocation densities. The evolution of the strain relaxation, threading dislocation density, and surface morphology were evaluated by triple axis X-ray diffraction, transmission electron microscopy, etch-pit density, and atomic force microscopy. Higher growth temperature led to threading densities as low as 106/cm2, as measured by plan-view transmission electron microscopy and etch-pit density. The final surface roughness was controlled by the growth temperature of a constant composition cap layer. Strain Relaxation and Surface Roughness of InxAl1–xAs Graded Buffer Layers Grown on InP for 6.05Å Applications. A.M.Noori, R.S.Sandhu, S.L.Hayashi, E.D.Meserole, V.Hardev, A.Cavus, M.Lange, C.Monier, R.Hsing, D.Sawdai, M.Wojtowicz, T.R.Block, A.Gutierrez-Aitken, M.S.Goorsky: Journal of Vacuum Science & Technology B, 2004, 22[5], 2303-8