Deep level transient spectroscopy and photoluminescence techniques were used to study the defects present in InAlAs/InP layers grown by metal organic chemical vapor deposition. In the deep level transient spectroscopy technique, different reverse bias and different heights and widths of the filling pulse were applied to the samples. The measurements revealed the presence of 4 defects labelled A to D, which were found to be in a good agreement with the results of the photoluminescence technique. In fact, a detailed study of the defect by photoluminescence technique had led to the same results as those determined by deep level transient spectroscopy.

DLTS and PL Study of Defects in InAlAs/InP Heterojunctions Grown by Metal Organic Chemical Vapor Deposition. S.Bouzgarrou, M.M.Ben Salem, F.Hassen, A.Kalboussi, A.Souifi: Materials Science and Engineering B, 2005, 116[2], 202-7