The results of experimental studies of the electrical and optical properties of n- and p-InAs crystals, irradiated with electrons at an energy of ~2MeV to doses as high as 1019/cm2 were reported. Specific features of the annealing (at temperatures as high as 800C) of radiation defects were also reported. The electronic structures of non-relaxed VAs, VIn, AsIn and InAs defects were calculated. A relationship between the electrical properties and the Fermi level position in irradiated InAs on the one hand and the electronic structure of the intrinsic defects and special features of the energy-band spectrum of InAs on the other hand was proposed.

The Electrical and Optical Properties of InAs Irradiated with Electrons (~2MeV) - the Energy Structure of Intrinsic Point Defects. V.N.Brudnyĭ, S.N.Grinyaev, N.G.Kolin: Semiconductors, 2005, 39[4], 385-94