X-ray diffraction topographs made with synchrotron radiation of an epitaxial InAs structure showed images of dislocations and stacking faults. Three types of dislocations were identified and their Burgers vectors were determined from a number of topographs having different diffraction vectors and recorded on the same film at a time. Straight dislocations were found to be edge dislocations and their Burgers vector was <110>. Also mixed dislocations were found. The overall dislocation density was about 2000/cm2. Large stacking faults were limited by long straight dislocations, the Burgers vector of which was <110>. Only a few threading dislocations were observed in the epitaxial layer grown by phase-phase epitaxy. Their density was about 500/cm2. Small circular dots found were interpreted as In-rich inclusions.

Synchrotron X-Ray Topographic Study of Dislocations and Stacking Faults in InAs. A.Lankinen, T.Tuomi, J.Riikonen, L.Knuuttila, H.Lipsanen, M.Sopanen, A.Danilewsky, P.J.McNally, L.O’Reilly, Y.Zhilyaev, L.Fedorov, H.Sipilä, S.Vaijärvi, R.Simon, D.Lumb, A.Owens: Journal of Crystal Growth, 2005, 283[3-4], 320-7