Epitaxially deposited thin films of InAs on semi-insulating GaAs substrates were commonly used for high-speed electronic devices. Large (7%) lattice mismatch between InAs and GaAs leads to Stranski–Krastanov growth mode with formation of 3D islands. The effect of growth temperature in metalorganic vapor-phase epitaxial deposition, on InAs crystal microstructure was studied. The origin of multiple tilting of the InAs crystal lattice observed for high temperature growth was investigated in detail. The microstructure of non-coalesced InAs islands was determined using X-ray diffraction rocking curve scans and back-scattered electron Kikuchi pattern crystal orientation imaging. Misoriented grains were formed within non-coalesced InAs islands at an early stage during the growth.

InAs Growth and Development of Defect Microstructure on GaAs. A.A.Khandekar, G.Suryanarayanan, S.E.Babcock, T.F.Kuech: Journal of Crystal Growth, 2005, 275[1-2], e1067-71