An investigation was made of the profiles of Zn in n-type InP <100> single crystal wafers and InGaAs epitaxial film prepared by semi-closed ampoule Zn diffusion. The different annealing effect on junction depth and concentration for InP and InGaAs was studied, and the difference was tentatively ascribed to solubility for each material. The maximum net acceptor concentration in InP changed from 3.3 x 1017/cm3 to 3.3 x 1018/cm3 before and after annealing, and the later value was close to the solubility limit for closed-ampoule Zn diffusion InP. Annealing did not make the maximum net acceptor concentration and depth in InGaAs change much.

An Experimental Investigation of Zn Diffusion into InP and InGaAs. S.He, Y.Zhao: Semiconductor Science and Technology, 2005, 20[2], 149-51