With the aim of realizing laser diodes on GaAs with an emission wavelength above 1120nm, the In incorporation behavior into highly strained pseudomorphic InGaAs quantum-wells grown by metalorganic vapor-phase epitaxy was studied. To obtain such long wavelengths the InxGa1−xAs (x > 0.3) quantum wells were grown at much lower temperature (530C) than the AlGaAs cladding layers. The In diffusion and the resultant emission wavelength shift during growth of the upper cladding layers and their dependence on growth parameters like strain compensation, quantum well composition and V/III-ratio were studied.

Interdiffusion in Highly Strained InGaAs-QWs for High Power Laser Diode Applications. F.Bugge, U.Zeimer, H.Wenzel, G.Erbert, M.Weyers: Journal of Crystal Growth, 2004, 272[1-4], 531-7