The concentration of defects in 1MeV Fe+ implanted In0.53Ga0.47As depended very strongly upon the implantation temperature. For implantation at 77K, the whole InGaAs layer was amorphous after a dose of 5 x 1014/cm2. Defects formed during 77K, room temperature and 100C implants resulted in an expansion of the lattice parameter of the layer and a change in the strain from tensile, for as-grown material, to compressive for as-implanted samples. Annealing of the 77K implanted samples caused re-growth of the amorphous layer and its thickness depended upon the annealing temperature.

Strain and Defect Structure of Iron Implanted In0.53Ga0.47As Using High-Resolution X-Ray Diffraction. P.Too, J.Z.Domagala, J.Bak-Misiuk, A.Kozanecki, S.Ahmed, B.J.Sealy: Nuclear Instruments and Methods in Physics Research Section B, 2005, 239[4], 414-8