A strain-relieved, dislocation-free InxGa1–xAs layer was selectively grown on nanoscale SiO2-patterned GaAs(001) by molecular beam epitaxy. By localizing the epitaxial area to a periodic array of nanoscale circular holes opened in a SiO2 mask and allowing the InxGa1–xAs epilayers selectively grown on adjacent holes to coalesce over the SiO2 mask by lateral overgrowth, the strain of the resulting InxGa1–xAs layer (x = 0.06) was relieved with a dramatically decreased generation of misfit dislocations. These experimental results qualitatively supported the basic idea of the Luryi-Suhir proposal.

Strain-Relieved, Dislocation-Free InxGa1–xAs/GaAs(001) Heterostructure by Nanoscale-Patterned Growth. S.C.Lee, L.R.Dawson, B.Pattada, S.R.J.Brueck, Y.B.Jiang, H.F.Xu: Applied Physics Letters, 2004, 85[18], 4181-3