A high resolution X-ray diffraction and photoluminescence study of a 10nm InGaAs/GaAs quantum well structure repeatedly diffused under thermally accurate and timed annealing conditions demonstrated that the Fickian model with a constant coefficient of diffusion was inadequate and that the distribution of compositions of the diffused well cannot be fitted with error functions. A simple model, with the well retaining its square shape and homogeneity while dissolving the barriers when annealed, was successful in modelling both the high-resolution X-ray diffraction and photoluminescence data.

Concentration Dependent Interdiffusion in InGaAs/GaAs as Evidenced by High Resolution X-Ray Diffraction and Photoluminescence Spectroscopy. F.Bollet, W.P.Gillin, M.Hopkinson, R.Gwilliam: Journal of Applied Physics, 2005, 97[1], 013536 (4pp)