The homogeneity and luminescence properties of undoped and Te-doped InxGa1-xSb crystals grown by the Bridgman and Vertical Feeding methods were studied by cathodoluminescence (CL) and X-ray micro-analysis in a scanning electron microscope. cathodoluminescence micrographs revealed the presence of non-radiative grain boundaries and dislocations in the investigated samples. Annealing (650C, 36h) significantly improves the structural quality and the compositional homogeneity of the Te-doped crystals. cathodoluminescence spectra of the ternary alloy were found to show features similar to those reported for GaSb.

Study of Defects in InxGa1-xSb Bulk Crystals. C.Díaz-Guerra, M.F.Chioncel, J.Vincent, V.Bermúdez, J.Piqueras, E.Diéguez: Physica Status Solidi C, 2005, 2[6], 1897-901