The InP (001) wafers were irradiated at room temperature and at liquid N temperature with swift Au ions. The bulk and near surface structure was investigated by means of X-ray grazing incidence diffraction and measurements at the (002) Bragg reflection. While irradiation at room temperature with 350MeV Au ions induced amorphization at a fluence of 1013/cm2, cooling to liquid N temperature during irradiation reduces the defect generation. A threshold value for complete bulk amorphization of 6 x 1012/cm2 was observed. The near surface lattice structure was less affected by the irradiation than the bulk.

Surface and Bulk Structural Changes in InP Single Crystals Induced by 350MeV Au Ion Irradiation. N.Darowski, I.Zizak, G.Schumacher: Physica B, 2005, 357[1-2], 118-21