Virgin and pre-damaged InP samples were irradiated at room temperature and at liquid N temperatures with different fluences of 140MeV Kr, 390MeV Xe and 600MeV Au ions. The pre-damaging was performed with 600keV Ge ions at liquid N temperatures to obtain different damage levels. The samples were analyzed by means of Rutherford backscattering spectrometry in random and channelling geometry. A relatively weak damage accumulation in virgin InP and a very significant defect annealing in pre-damaged InP occurred due to 140MeV Kr irradiation. The damaging of virgin InP with 390MeV Xe and 600MeV Au was much more efficient in comparison with that of 140MeV Kr. Further, annealing of the pre-damaged InP due to 390MeV Xe irradiation was hardly visible. At liquid N temperatures, InP appeared to be much more radiation-resistant to swift heavy ion irradiation than at room temperature. The results showed that, during swift heavy ion irradiation of InP, both damage formation and damage annealing occurred simultaneously. Whether the first or the second process played the more important role depended upon the swift heavy ion mass and energy.

Damage Formation and Annealing in InP Due to Swift Heavy Ions. A.Kamarou, W.Wesch, E.Wendler, S.Klaumünzer: Nuclear Instruments and Methods in Physics Research Section B, 2004, 225[1-2], 129-35