During the growth of InP crystals, dislocations were mostly generated in a plastically deformed crystal due to crystallographic glide caused by excessive thermal stresses. High dislocation density presented in the InP crystal could reduce the performance, lifetime, and reliability of the InP-based microelectronic and opto-electronic devices/circuits. The generation of dislocations in InP single crystals grown from the melt could be predicted by using a transient finite-element model. This model couples microscopic dislocation motion and multiplication to macroscopic plastic deformation during the crystal growth process. The temperature fields in the crystal were determined by solving the partial differential equations of heat transfer for the vertical gradient freeze process. These temperature fields were then employed to the transient finite-element model to study the effects of doping impurities and growth parameters (i.e., imposed temperature gradient, crystal radius, and growth rate) on dislocation reduction in InP crystals grown by different vertical gradient freeze processes.

Dislocation Reduction in Sulfur- and Germanium-Doped Indium Phosphide Single Crystals Grown by the Vertical Gradient Freeze Process - a Transient Finite-Element Study. X.A.Zhu, C.T.Tsai: Journal of Applied Physics, 2005, 97[4], 043520 (9pp)