This work investigated the effects of hydrostatic pressure on the properties and bistability of the scientifically challenging and technologically important deep MFe center in Fe-doped n-type InP. When occupied by electrons, the center could be reversibly placed in either of two configurations, termed A and B, by the proper choice of electric biasing conditions and temperature. Pressure had a very large influence on the balance between these two configurations, favoring A over B. Above 8kbar essentially only the A configuration was observed. This result, along with detailed studies of the effects of pressure on the energetics of the two configurations and on the kinetics of the B → A transformation, provide important new insights about the nature of the 2 configurations and their associated deep levels.

Effects of Pressure on Deep Levels in Semiconductors - the MFe Center in InP. G.A.Samara, C.E.Barnes: Physica Status Solidi B, 2004, 241[14], 3293-9