Point defects in n-InP were studied by deep-level transient spectroscopy. A radiation-induced bistable defect was found to form under irradiation of a space-charge region of n-InP Shottky-barrier diodes. The transformations of the defect configuration stimulated by heating, illumination, and current flow were studied.

A Bistable Defect in InP. V.V.Peshev: Russian Physics Journal, 2005, 48[4], 417-22