It was recalled that it had been shown that the high-temperature annealing of Sb-doped GaAs layers, grown by liquid-phase epitaxy, produced an electron trap with properties that were similar to the Sb-related double-donor which was observed in material grown using other techniques. Temperature-dependent Hall-effect and transient photocapacitance analyses of the trap in annealed liquid-phase epitaxial GaAs1-xSbx layers, where x was less than 0.02, were used to determine the first and second charge state energies of the trap. The results further confirmed the previous attribution of the trap to SbGa defects which were produced during annealing.

Hall and Photocapacitance Analyses of the Sb-Related Electron Trap in GaAsSb Layers Grown by Liquid Phase Epitaxy S.Dhar, M.Mazumdar: Semiconductor Science and Technology, 2000, 15[6], 622-4