An investigation was made of the effect of micro-twin defects on InSb quantum wells grown onto GaAs (001) substrates. Transmission electron microscopy analysis revealed that the quantum wells layers were intersected by micro-twins that arose from lattice mismatch with the substrate. The intersected parts of the quantum wells lay near to, or in, the {111} plane; which was tilted by 15.8° with respect to the (001) substrate. Hall effect measurements indicated that the degradation of electron mobility in the quantum wells was closely related to the density of the micro-twins.

Effect of Micro-Twin Defects on InSb Quantum Wells. T.D.Mishima, J.C.Keay, N.Goel, M.A.Ball, S.J.Chung, M.B.Johnson, M.B.Santos: Journal of Vacuum Science & Technology B, 2005, 23[3], 1171-3