A nonlinear phenomenological equation was proposed for the description of shallow (up to 1µm) impurity diffusion in semiconductors and was solved by numerical methods. A comparison to the results of measurements of the diffusion of As in Si showed good agreement between the proposed theory and experiment.

Modeling Nonlinear High-Gradient Diffusion in Semiconductors. L.A.Kondrachenko, A.É.Rassadin, A.S.Chistyakov: Technical Physics Letters, 2005, 31[2], 101-2