The diffusion and segregation of Sb and As was investigated after low-energy implantation and annealing, both rapid thermal processing and furnace annealing. It was demonstrated that the absence of transient enhanced diffusion effects for Sb facilitates the fabrication of significantly shallower junctions with less dopant segregation to the surface. It was shown that Sb implantation could be used to fabricate low-resistivity ultra-shallow junctions suitable for source/drain extensions in n-type metal–oxide–semiconductor field effect transistors.

Diffusion and Segregation of Shallow As and Sb Junctions in Silicon. D.Krüger, H.Rücker, B.Heinemann, V.Melnik, R.Kurps, D.Bolze: Journal of Vacuum Science & Technology B, 2004, 22[1], 455-8