First results on the effects of strain on transient enhanced diffusion and deactivation of As-implanted ultra-shallow junctions were presented. A significant effect of strain on the magnitude and timescale of transient enhanced diffusion was observed, which was consistent with the stabilization of interstitial-type defects by tensile strain. The results showed no significant impact of strain upon As electrical activity during the deactivation timescale accessed here.

Transient Enhanced Diffusion and Deactivation of Ion-Implanted As in Strained Si. G.D.M.Dilliway, A.J.Smith, J.J.Hamilton, J.Benson, L.Xu, P.J.McNally, G.Cooke, H.Kheyrandish, N.E.B.Cowern: Nuclear Instruments and Methods in Physics Research B, 2005, 237[1-2], 131-5