An investigation was made of B diffusion, during rapid thermal annealing in Si implanted with B, by using an energy of 1keV and a dose of 1016/cm2. Two types of sample were studied. These were As-implanted or pre-treated by excimer laser annealing. For both types, the enhanced diffusion of B was observed; with enhancement by a factor of 3 to 5 as compared with so-called standard diffusion. It was suggested that the high concentration of implanted B was a dominant factor in diffusion enhancement, as compared to the effect of implantation-induced damage. The data indicated that the proximity of the surface could also affect the B diffusion enhancement.

Enhanced Boron Diffusion in Excimer Laser Pre-Annealed Si. E.V.Monakhov, B.G.Svensson, M.K.Linnarsson, A.La Magna, C.Spinella, C.Bongiorno, V.Privitera, G.Fortunato, L.Mariucci: Applied Physics Letters, 2005, 86[15], 151902 (3pp)