The B implantation (1keV, 1015/cm2) into 125nm-wide free-standing Si nanostructures was characterized by using scanning spreading resistance microscopy following 0s, 1050C annealing in N2. A curved diffusion front was observed. The B in the center of the ridge diffused further than at the sides. A similar effect was observed in simulations. It was attributed to a reduction in transient enhanced diffusion close to the vertical surfaces due to recombination of ion-implantation-induced excess Si self-interstitials.

Scanning Spreading Resistance Microscopy of Two-Dimensional Diffusion of Boron Implanted into Free-Standing Silicon Nanostructures. S.M.Kluth, D.Álvarez, S.Trellenkamp, J.Moers, S.Mantl, J.Kretz, W.Vandervorst: Journal of Vacuum Science & Technology B, 2005, 23[1], 76-9