An enhanced formation of B-H pairs during the electron irradiation of Si crystals, co-doped with B and H, was observed. Such formation was not observed in the case of Ga-H pairs. These results indicated that the B-H formation during electron irradiation was due to the enhancement of B motion but not H motion. The optical absorption spectrum of B-H pairs observed here was the same as that formed by the annealing of similar specimens, in which B occupied a substitutional site, Bs. Thus, the observed spectrum was due to BsH pairs in both experiments; even though the above B motion occurred due to the motion of interstitial B.

Fast Boron Diffusion in Si Crystal under Electron Irradiation at Room Temperature Indicated by the Enhanced Formation of Boron-Hydrogen Pairs. M.Suezawa, K.Kojima, A.Kasuya: Japanese Journal of Applied Physics, 2005, 44[9], L275-7