A study was made of interstitial injection during the oxidation of very low-energy N-implanted Si. Buried B δ-layers were used to monitor the interstitial supersaturation during the oxidation of N-implanted Si. No difference in B diffusivity enhancement was observed as compared to dry oxidation of non-implanted samples. This result was different from experiences with N2O oxynitridation studies, during which a B diffusivity enhancement of the order of 20% was observed; thus revealing the influence of interfacial N upon interstitial kinetics. A possible explanation was that implanted N acted as an excess interstitial sink in order to diffuse towards the surface via a non-Fickian mechanism.

Oxidation-Enhanced Diffusion of Boron in Very Low-Energy N2+-Implanted Silicon. D.Skarlatos, C.Tsamis, M.Perego, M.Fanciulli: Journal of Applied Physics, 2005, 97[11], 113534 (6pp)