In order to understand the possibility of using Ga for modern Si device fabrication in a low-thermal-budget era, the diffusion characteristics of ion-implanted Ga in Si during 850C annealing were investigated. The results obtained were that: (1) About 70% of 5 x 1013/cm2 implanted Ga remained in Si after the annealing. (2) Transient enhanced diffusion occurred during the early stage of the annealing. (3) The intrinsic diffusion characteristic obtained was consistent with that extrapolated from a higher temperature region. (4) The sheet resistance of the Ga-doped layer was roughly the same as that of the B-doped one.

Characterization of Ion-Implanted Gallium Diffusion in Silicon. Y.Sato, I.Sakaguchi, H.Haneda: Japanese Journal of Applied Physics, 2004, 43[12], 8024-5