The diffusion of H in p-type Czochralski Si was investigated by combined Raman spectroscope, scanning electron microscope, and spreading resistance probe measurements. Exposure of Si wafers to radio-frequency H plasma resulted in the formation of platelets. The increase of hydrogenation duration leads to the growth of the platelets and the reduction of the H diffusivity. The large platelets grow faster than the small ones. The growth of the platelets was based on the capture of H. The dependence of the H diffusivity upon the average size of the platelets suggested that the in-diffusion of H was suppressed by the platelets.

Suppression of Hydrogen Diffusion at the Hydrogen-Induced Platelets in p-Type Czochralski Silicon. Y.L.Huang, Y.Ma, R.Job, W.R.Fahrner: Applied Physics Letters, 2005, 86[13], 131911 (3pp)