A study was made of deep and through channels formed in n-Si wafers by means of thermal migration of thin discrete aluminum zones. The region of thermal migration channels was investigated using selective chemical etching of Si in combination with secondary ion mass spectrometry for the analysis of impurity distributions. It was established that the channels were surrounded by two distinct peripheral shells.

The Structure of Thermomigration Channels in Silicon. É.Y.Buchin, Y.I.Denisenko, S.G.Simakin: Technical Physics Letters, 2004, 30[3], 205-7